EL5421CYZ Intersil, EL5421CYZ Datasheet - Page 10

• Manufacturer Part Number: EL5421CYZ
• Description: IC BUFFER QUAD R-R 12MHZ 10-MSOP
• Manufacturer: Intersil

Specifications of EL5421CYZ

• Amplifier Type: Buffer
• Number Of Circuits: 4
• Output Type: Rail-to-Rail
• Slew Rate: 10 V/µs
• -3db Bandwidth: 12MHz
• Current - Input Bias: 2nA
• Voltage - Input Offset: 2000µV
• Current - Supply: 500µA
• Current - Output / Channel: 120mA
• Voltage - Supply, Single/dual (±): 4.5 V ~ 16.5 V, ±2.25 V ~ 8.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP, Micro10™, 10-uMAX, 10-uSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -

dissipation could easily increase such that the device may
be damaged. Maximum reliability is maintained if the output
continuous current never exceeds ±30mA. This limit is set by
the design of the internal metal interconnects.
Output Phase Reversal
The EL5421 is immune to phase reversal as long as the
input voltage is limited from V
24 shows a photo of the output of the device with the input
voltage driven beyond the supply rails. Although the device's
output will not change phase, the input's overvoltage should
be avoided. If an input voltage exceeds supply voltage by
more than 0.6V, electrostatic protection diodes placed in the
input stage of the device begin to conduct and overvoltage
damage could occur.
Power Dissipation
With the high-output drive capability of the EL5421 buffer, it
is possible to exceed the +125°C 'absolute-maximum
junction temperature' under certain load current conditions.
Therefore, it is important to calculate the maximum junction
temperature for the application to determine if load
conditions need to be modified for the buffer to remain in the
safe operating area.
The maximum power dissipation allowed in a package is
determined according to:
where:
P
DMAX
FIGURE 24. OPERATION WITH BEYOND-THE-RAILS INPUT
T
T
θ
P
JA
JMAX
AMAX
DMAX
= Thermal resistance of the package
=
= Maximum junction temperature
= Maximum ambient temperature
= Maximum power dissipation in the package
T
-------------------------------------------- -
JMAX
1V
1V
Θ
–
JA
T
AMAX
10
S
- -0.5V to V
10µs
V
T
V
A
S
IN
=25°C
=±2.5V
=6V
S
+ +0.5V. Figure
P-P
(EQ. 1)
EL5421
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
when sourcing, and:
when sinking.
Where:
If we set the two P
can solve for R
and 26 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
simple matter to see if P
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figures 25 and 26.
P
P
DMAX
DMAX
FIGURE 25. PACKAGE POWER DISSIPATION vs AMBIENT
i = 1 to 4 for quad
V
I
V
I
SMAX
LOAD
S
OUT
= Total supply voltage
i = Maximum output voltage of the application
=
=
i = Load current
= Maximum supply current per channel
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Σi V
Σi V
1
0
[
[
0
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
TEMPERATURE
870mW
S
S
LOAD
×
×
I
I
SMAX
SMAX
DMAX
25
AMBIENT TEMPERATURE (°C)
i to avoid device overheat. Figures 25
DMAX
+
+
equations equal to each other, we
(
(
V
V
50
S
OUT
+ V
exceeds the device's power
–
i V
–
OUT
75
S
- )
i )
85
×
×
I
I
LOAD
LOAD
100
i
i
]
]
August 2, 2007
125
FN7198.2
(EQ. 2)
(EQ. 3)