TISP8211MDR-S Bourns Inc., TISP8211MDR-S Datasheet
TISP8211MDR-S
Specifications of TISP8211MDR-S
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TISP8211MDR-S Summary of contents
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High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M, Negative Overvoltage Protector – Wide 0 to -90 V Programming Range – Low 5 mA max. Gate Triggering Current – High -150 mA min. Holding Current TISP8201M, Positive ...
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TISP8200M & TISP8201M Description (Continued) Negative overvoltages are initially clipped close to the SLIC negative supply by emitter follower action of the NPN buffer transistor. If sufficient clipping current flows, the SCR will regenerate and switch into a low voltage ...
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TISP8200M & TISP8201M Absolute Maximum Ratings for TISP8201M Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak on-state pulse current, (see Notes 1 and 2) 10/1000 ...
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TISP8200M & TISP8201M Electrical Characteristics for TISP8200M Parameter I Off-state current Reverse current Breakover voltage dv/dt = -250 V/ms, Source Resistance = 300 Ω (BO) V ...
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TISP8200M & TISP8201M Parameter Measurement Information V GK(BO (BO) Quadrant III Switching Characteristic V RRM -v I RRM Quadrant III Blocking Characteristic + TSM I TSP -i ...
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TISP8200M & TISP8201M Operation of SLICs using Positive and Negative Voltage Supply Rails Figure 3 shows a typical powering arrangement for a multi-supply rail SLIC. V BATR is a positive supply and V BATL and V BATH are negative supplies. ...
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TISP8200M & TISP8201M SLIC Parameter Values The table below shows some details of currently available SLICs using positive and negative supply rails. Manufacturer SLIC SERIES SLIC # Data Sheet Issue Short Circuit Current V max. BATH V max. BATR V ...
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TISP8200M & TISP8201M Operation of Gated Protectors (Continued) RING TIP AI8XAD The negative protection voltage, V (BO) , will be the sum of the gate supply (V BATH ) and the TISP8200M peak gate(terminal)-cathode voltage ( Under a.c. ...
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TISP8200M & TISP8201M Voltage Stress Levels on the TISP8200M and TISP8201M (Continued) Testing transistor CB and SCR AK off state: SCR blocking junction does not break down during this period, a d.c. test for off-state current can be applied at ...
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TISP8200M & TISP8201M TISP8200M and TISP8201M Voltage Overshoot Figure 9 shows typical overshoots on a 100 A 2/10 waveshape. Both devices are under 10 V peak, which meets the needs of the SLICs listed earlier. Line Protection with TISP8200M and ...
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TISP8200M & TISP8201M Device Symbolization Code Devices are coded as below. MECHANICAL DATA Device Symbolization TISP8200M 8200M TISP8201M 8201M “TISP” trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is ...