TISP8211MDR-S Bourns Inc., TISP8211MDR-S Datasheet - Page 9

• Manufacturer Part Number: TISP8211MDR-S
• Description: SURGE PROT THYRIST POS V SLIC
• Manufacturer: Bourns Inc.

Specifications of TISP8211MDR-S

• Technology: Mixed Technology
• Number Of Circuits: 1
• Applications: SLIC
• Package / Case: 8-SOIC (3.9mm Width)
• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Working: -
• Voltage - Clamping: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: TISP8211MDR-STR

Testing transistor CB and SCR AK off state:
SCR blocking junction does not break down during this period, a d.c. test for off-state current can be applied at the overshoot voltage value.
To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is shorted during this test (see Figure 8).
Summary:
Voltage Stress Levels on the TISP8200M and TISP8201M (Continued)
TISP8200M & TISP8201M
Two tests are needed to verify the protector junctions. Maximum current values for I R and I D are required.
8201M
V
(BO)
0 V
I
R
(internal)
I
R
8200M
V
(BO)
The highest AK voltage occurs during the overshoot period of the protector. To make sure that the
0 V
RING
K
OR
TIP
Figure 8. Off-State Current Verification
0 V
Figure 7. Reverse Current Verification
8201M
I
EB
I
V
D
(BO)
Figure 6. Protector Electrodes
B (G)
8200M
(internal)
I
D
TISP
I
D
(internal)
V
BATH
I
D
K
A
K
8200M
V
(BO)
A
C
E
I
B (G)
CB
A
K
B (G)
8200M
TISP
Customers should verify actual device performance in their specific applications.
I
C
E
CB
I
B (G)
R
8200M
B (G)
8201M
(internal)
V
TISP
TISP
BATH
I
R
8201M
AI8XAK
TISP
V
AI8XAH
0 V
BATR
A
0 V
I
EB
Specifications are subject to change without notice.
B (G)
8201M
TISP
V
AI8XAJ
MAY 1998 - REVISED JANUARY 2007
BATR
0 V