TISP8211MDR-S Bourns Inc., TISP8211MDR-S Datasheet - Page 4

• Manufacturer Part Number: TISP8211MDR-S
• Description: SURGE PROT THYRIST POS V SLIC
• Manufacturer: Bourns Inc.

Specifications of TISP8211MDR-S

• Technology: Mixed Technology
• Number Of Circuits: 1
• Applications: SLIC
• Package / Case: 8-SOIC (3.9mm Width)
• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Working: -
• Voltage - Clamping: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: TISP8211MDR-STR

MAY 1998 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
NOTE
NOTE
Electrical Characteristics for TISP8200M, T A = 25
Electrical Characteristics for TISP8201M, T A = 25
Thermal Characteristics
R
V
V
V
V
C
C
θ
I
I
I
(BO)
(BO)
I
(BO)
(BO)
I
I
GT
I
I
GT
JA
D
H
D
R
H
R
off
off
TISP8200M & TISP8201M
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
Off-state current
Reverse current
Breakover voltage
Breakover voltage
Holding current
Gate trigger current
Off-state capacitance
Off-state current
Reverse current
Breakover voltage
Breakover voltage
Holding current
Gate trigger current
Off-state capacitance
Parameter
Parameter
device terminals are a.c. connected to the guard terminal of the bridge.
device terminals are a.c. connected to the guard terminal of the bridge.
Junction to free air thermal resistance
Parameter
dv/dt = -250 V/ms, Source Resistance = 300 Ω , V
V
V
dv/dt = 250 V/ms, Source Resistance = 300 Ω , V
(I
(I
(I
(I
V
V
2/10 waveshape, (I
f = 1 MHz, V
2/10 waveshape, (I
f = 1 MHz, V
D
R
A
R
A
K
K
D
) I
) I
) I
) I
= V
= V
= V
= V
T
T
T
T
= 1 A, di/dt = -1 A/ms, V
= 5 A, t
= -5 A, t
DRM
RRM
= -1 A, di/dt = 1 A/ms, V
RRM
DRM
, V
, V
, V
, V
d
d
GK
GA
GK
p(g)
GA
= 1 V, V
= 1 V, V
p(g)
= 0
= -70 V
= 70 V
= 0
≥ 20 µs, V
≥ 20 µs, V
K
A
) I
) I
°
°
GA
GK
C (Unless Otherwise Noted)
T
C (Unless Otherwise Noted)
T
= -100 A, di/dt
= 100 A, di/dt
= -80 V, (see Note 4)
= 80 V, (see Note 4)
P
Test Conditions
Test Conditions
tot
GK
GA
= 0.52 W, T
GK
GA
= 80 V
= -80 V
= 80 V
= -80 V
Test Conditions
max.
max.
A
= 58 A/µs, V
= 70°C, 5 cm
= -58 A/µs, V
GK
GA
= 80 V
= -80 V
GK
GA
2
, FR4 PCB
= 80 V
V
T
T
T
T
= -80 V
V
V
T
J
T
J
D
T
J
T
J
V
D
J
J
D
J
J
= 85 °C
= 85 °C
= 85 °C
= 85 °C
= -50 V
D
V
V
= 50 V
= 0 °C
= 0 °C
= 0 °C
= 0 °C
= -5 V
= 5 V
D
D
= 0
= 0
-150
Min
Min
Min
+20
Typ
Typ
Typ
Max
Max
Max
-50
-82
-95
-50
160
50
35
20
10
50
35
-5
-5
82
95
20
10
-5
5
5
5
Unit
Unit
°C/W
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
pF
µA
µA
pF
V
V
V
V