IRL530N International Rectifier, IRL530N Datasheet - Page 3

• Manufacturer Part Number: IRL530N
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL530N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 9A. 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530N

1 0 0
1 0 0
0.1
0.1
1 0
1 0
1
Fig 3. Typical Transfer Characteristics
1
0.1
2
Fig 1. Typical Output Characteristics
TOP
BOTTOM 2.5V
3
V
V
G S
D S
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
4
, G ate-to -So urce Voltag e (V)
, D rain-to-S ource V oltage (V )
T = 2 5 °C
J
1
5
T = 1 7 5°C
J
6
2 .5V
V
2 0µ s P U L S E W ID TH
2 0µ s P U LS E W ID TH
T = 2 5°C
DS
J
7
= 5 0V
1 0
8
9
1 0 0
1 0
A
A
1 0 0
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 0
1
0.1
-60 -40 -20
TOP
BOTTOM 2.5V
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I
D
= 15 A
T , J unc tion T em perature (°C )
V
J
D S
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
Vs. Temperature
0
, D rain-to-S ource V oltage (V )
2 0
1
4 0
6 0
IRL
2.5 V
8 0
2 0µ s P U LS E W ID TH
T = 1 75 °C
J
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
1 0
V
G S
= 1 0V
1 0 0
A
A