IRL530N International Rectifier, IRL530N Datasheet - Page 5

• Manufacturer Part Number: IRL530N
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL530N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 9A. 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530N

0.01
20
15
10
0.1
10
0.00001
5
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
Case Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
5.0V
V
GS
t
r
V
J
DS
µs
DM
x Z
1
0.1
IRL
thJC
D.U.T.
P
2
DM
t
d(off)
+ T
R
C
D
t
1
t
f
t
2
+
-
V
DD
1