IRL530N International Rectifier, IRL530N Datasheet - Page 8

• Manufacturer Part Number: IRL530N
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL530N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 9A. 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530N

TO-220AB package is not recommended for Surface Mount Application.
Dimensions are shown in millimeters (inches)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
For GB Production
EX A M PLE:
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10.54 (.415)
10.29 (.405)
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position indicates "Lead-Free"
THIS IS A NIRF1010
LOT C O DE 1789
A SSEM BLEDO NW W19, 1997
INTHE A SSEM BLYLINE "C "
1
2
3
4
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
M
- A -
B A M
DIU SI6UDPI6G
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
INTERNA TIONA L
Visit us at www.irf.com for sales contact information. 01/04
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REC TIFIER
A SSEM BLY
LO T C O DE
Data and specifications subject to change without notice.
GPBP
LO G O
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
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DA TE C O DE
Y EA R 7 = 1997
W EEK19
LINE C
Q6SUÃIVH7 S
PA RT NUM BER
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
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TAC Fax: [phone]
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR