SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR880DP-T1-GE3
• Description: MOSFET N-CH D-S 80V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR880DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Input Capacitance (ciss) @ Vds: 2440pF @ 40V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 6.25W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIR880DP-T1-GE3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 65702
S10-2683-Rev. B, 22-Nov-10
0.010
0.009
0.008
0.007
0.006
0.005
0.004
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
GS
V
0.5
DS
11
20
= 7.5 V
V
DS
= 40 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
V
- Total Gate Charge (nC)
D
GS
DS
Gate Charge
- Drain Current (A)
1.0
22
40
= 10 V thru 5 V
= 20 V
V
V
GS
GS
1.5
33
60
= 4 V
= 4.5 V
V
DS
V
= 60 V
V
GS
GS
2.0
44
80
= 3 V
= 10 V
100
2.5
55
4500
3600
2700
1800
900
2.1
1.8
1.5
1.2
0.9
0.6
10
8
6
4
2
0
0
- 50
0
0
C
C
C
I
oss
D
rss
iss
On-Resistance vs. Junction Temperature
= 20 A
- 25
V
16
1
T
DS
T
V
T
J
Transfer Characteristics
C
0
GS
C
- Junction Temperature (°C)
T
- Drain-to-Source Voltage (V)
= - 55 °C
= 125 °C
C
- Gate-to-Source Voltage (V)
V
= 25 °C
GS
Capacitance
25
32
2
= 4.5 V
50
V
GS
Vishay Siliconix
48
= 10 V
3
75
SiR880DP
100
www.vishay.com
64
4
125
150
80
5
3