SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR880DP-T1-GE3
• Description: MOSFET N-CH D-S 80V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR880DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Input Capacitance (ciss) @ Vds: 2440pF @ 40V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 6.25W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIR880DP-T1-GE3TR

SiR880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.001
- 0.2
- 0.5
- 0.8
0.01
0.4
0.1
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
J
T
Threshold Voltage
= 150 °C
0.4
J
- Temperature (°C)
25
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
T
0.1
10
J
100
1
= 25 °C
0.01
Limited by R
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
125
GS
> minimum V
V
150
Single Pulse
1.2
T
DS
0.1
DS(on)
A
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
80
40
0
10
0
0 .
0
isspecified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
V
100
0.01
1 s
10 s
10 ms
100 ms
DC
GS
1 ms
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S10-2683-Rev. B, 22-Nov-10
Document Number: 65702
6
T
J
1
T
J
= 125 °C
= 25 °C
8
10
1
0