SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 6
![MOSFET N-CH D-S 80V 8-SOIC](/photos/29/5/290572/powerpak12128_sml.jpg)
SIR880DP-T1-GE3
Manufacturer Part Number
SIR880DP-T1-GE3
Description
MOSFET N-CH D-S 80V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIR880DP-T1-GE3.pdf
(7 pages)
Specifications of SIR880DP-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Input Capacitance (ciss) @ Vds
2440pF @ 40V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Gate Charge Qg
49 nC
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.007 Ohms
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
60 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
8.5mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.2V
Power Dissipation Pd
6.25W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIR880DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR880DP-T1-GE3
Manufacturer:
VISHA
Quantity:
20 000
SiR880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
www.vishay.com/ppg?65702.
1
10 -
10
-4
4
0.1
Single Pulse
0.05
Duty Cycle = 0.5
0.2
0.05
0.02
0.1
0.2
Duty Cycle = 0.5
10 -
0.02
3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10 -
2
Single Pulse
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10 -
1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-- T
t
1
1
A
S10-2683-Rev. B, 22-Nov-10
= P
t
2
Document Number: 65702
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1000
1
0