2N7002BKW,115 NXP Semiconductors, 2N7002BKW,115 Datasheet - Page 8
![MOSFET N-CH 60V 310MA SOT323](/photos/16/4/160412/sot23_sml.jpg)
2N7002BKW,115
Manufacturer Part Number
2N7002BKW,115
Description
MOSFET N-CH 60V 310MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002215.pdf
(11 pages)
Specifications of 2N7002BKW,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
275mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Vgs(th) (max) @ Id
2.1V @ 250µA
Current - Continuous Drain (id) @ 25° C
310mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohms
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
300 mA
Power Dissipation
0.83 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Philips Semiconductors
7. Package outline
Fig 13. Package outline SOT23
2N7002_6
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
Rev. 06 — 28 April 2006
2
1.9
e
w
0.95
B
M
e
1
JEITA
scale
B
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
EUROPEAN
w
N-channel TrenchMOS FET
L p
A
Q
c
X
v
ISSUE DATE
2N7002
M
04-11-04
06-03-16
A
SOT23
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