PSMN015-60PS,127 NXP Semiconductors, PSMN015-60PS,127 Datasheet - Page 8
![MOSFET N-CH 60V 50A SOT78](/photos/16/7/160729/to220ab_sml.jpg)
PSMN015-60PS,127
Manufacturer Part Number
PSMN015-60PS,127
Description
MOSFET N-CH 60V 50A SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN015-60PS127.pdf
(14 pages)
Specifications of PSMN015-60PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
86W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
20.9nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
60V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.8 mOhm @ 15A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
34 mOhms
Drain-source Breakdown Voltage
54 V
Continuous Drain Current
36 A
Power Dissipation
86 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
PSMN015-60PS_2
Objective data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
60
40
20
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
0
0.5
0
10
7
6
5.5
60
1
max
min
typ
120
1.5
V
All information provided in this document is subject to legal disclaimers.
GS
5
V
003aad280
T
003aae031
j
(V) = 4
DS
(°C)
(V)
4.7
4.5
Rev. 02 — 22 February 2010
180
2
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
N-channel 60 V 14.8 mΩ standard level MOSFET
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
factor as a function of junction temperature
0
0
2
PSMN015-60PS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
8 of 14