PSMN015-60PS,127 NXP Semiconductors, PSMN015-60PS,127 Datasheet - Page 9
![MOSFET N-CH 60V 50A SOT78](/photos/16/7/160729/to220ab_sml.jpg)
PSMN015-60PS,127
Manufacturer Part Number
PSMN015-60PS,127
Description
MOSFET N-CH 60V 50A SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN015-60PS127.pdf
(14 pages)
Specifications of PSMN015-60PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
86W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
20.9nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
60V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.8 mOhm @ 15A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
34 mOhms
Drain-source Breakdown Voltage
54 V
Continuous Drain Current
36 A
Power Dissipation
86 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
PSMN015-60PS_2
Objective data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(m Ω )
R
V
(V)
DSon
GS
60
45
30
15
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
12 V
(V) = 4.5
15
V
DS
10
= 30 V
30
4.7
20
48 V
45
All information provided in this document is subject to legal disclaimers.
Q
003aae038
G
003aae037
I
D
(nC)
(A)
5.5
6.5
10
Rev. 02 — 22 February 2010
30
60
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
N-channel 60 V 14.8 mΩ standard level MOSFET
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN015-60PS
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aae034
(V)
C
C
C
iss
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