STP7N52DK3 STMicroelectronics, STP7N52DK3 Datasheet - Page 13

• Manufacturer Part Number: STP7N52DK3
• Description: MOSFET N-CH 620V 6.2A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STP7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10714-5

STD7N52DK3, STF7N52DK3, STP7N52DK3
DIM.
D1
A1
A2
E1
V2
b4
c2
e1
L1
L2
L4
A
D
E
H
R
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
Doc ID 16387 Rev 2
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
Package mechanical data
0068772_G
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o
13/16