STP7N52DK3 STMicroelectronics, STP7N52DK3 Datasheet - Page 4
![MOSFET N-CH 620V 6.2A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP7N52DK3
Manufacturer Part Number
STP7N52DK3
Description
MOSFET N-CH 620V 6.2A TO-220
Manufacturer
STMicroelectronics
Series
SuperFREDmesh3™r
Datasheet
1.STD7N52DK3.pdf
(16 pages)
Specifications of STP7N52DK3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.15 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
525V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
870pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.15 Ohms
Forward Transconductance Gfs (max / Min)
1.5 V
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
6.2 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
34 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10714-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP7N52DK3
Manufacturer:
STMicroelectronics
Quantity:
800
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
oss eq.
oss eq.
oss
oss
rss
iss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
increases from 0 to 80% V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 16387 Rev 2
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 525 V, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 420 V, I
Figure 20
Test conditions
Test conditions
GS
, I
GS
D
D
STD7N52DK3, STF7N52DK3, STP7N52DK3
D
= 50 µA
)
= 3 A
= 0
= 6 A,
GS
C
=125 °C
= 0
Min.
Min.
525
3
-
-
-
-
-
Typ.
Typ.
3.75
0.95
870
3.5
70
13
53
74
33
19
5
Max.
Max.
± 10
1.15
4.5
50
1
-
-
-
-
-
oss
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
pF
V
V
Ω
Ω