STP7N52DK3 STMicroelectronics, STP7N52DK3 Datasheet - Page 15

• Manufacturer Part Number: STP7N52DK3
• Description: MOSFET N-CH 620V 6.2A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STP7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10714-5

STD7N52DK3, STF7N52DK3, STP7N52DK3
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Revision history
Table 10.
09-Oct-2009
20-Oct-2010
Date
Document revision history
Revision
1
2
First release
Document status promoted from preliminary data to datasheet
Doc ID 16387 Rev 2
Changes
Revision history
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