STP10NM50N STMicroelectronics, STP10NM50N Datasheet - Page 10

• Manufacturer Part Number: STP10NM50N
• Description: MOSFET N-CH 500V 7A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Formed Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.63 Ohms
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10770-5

Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 16929 Rev 2
STD10NM50N, STF10NM50N, STP10NM50N
®