STP10NM50N STMicroelectronics, STP10NM50N Datasheet - Page 13

• Manufacturer Part Number: STP10NM50N
• Description: MOSFET N-CH 500V 7A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Formed Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.63 Ohms
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10770-5

STD10NM50N, STF10NM50N, STP10NM50N
DIM.
D
A
A
E
V2
b
c
e
L
L
L
D
H
R
A
E
b
c
e
L
2
4
1
1
2
4
1
2
1
1
m
2
0
0
0
5
0
0
6
6
4
9
0
0
2 .
9 .
0 .
6 .
2 .
4 .
4 .
0 .
4 .
4 .
3 .
6 .
1
i
. n
o
0
0
3
4
0
5
8
0
0
0
5
0
TO-252 (DPAK) mechanical data
Doc ID 16929 Rev 2
mm.
5
4
2
2
0
0
y t
1 .
7 .
2 .
8 .
8 .
2 .
p
0
0
8
0
0
0
Package mechanical data
0068772_G
1
m
2
1
0
0
5
0
0
6
6
4
0
8
4 .
1 .
2 .
9 .
4 .
6 .
6 .
2 .
6 .
6 .
1
a
1 .
o
. x
0
0
3
0
0
0
0
0
0
0
0
13/16