STP10NM50N STMicroelectronics, STP10NM50N Datasheet - Page 12

• Manufacturer Part Number: STP10NM50N
• Description: MOSFET N-CH 500V 7A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Formed Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.63 Ohms
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10770-5

Package mechanical data
12/16
Dim
L20
L30
∅P
D1
H1
b1
e1
L1
J1
D
Q
A
b
E
e
F
L
c
TO-220 type A mechanical data
Doc ID 16929 Rev 2
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
STD10NM50N, STF10NM50N, STP10NM50N
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14