STW13N95K3 STMicroelectronics, STW13N95K3 Datasheet - Page 13

• Manufacturer Part Number: STW13N95K3
• Description: MOSFET N-CH 950V 10A 190W TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STW13N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.68 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 51 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10772-5

STF13N95K3, STP13N95K3, STW13N95K3
Dim.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
e
L
c
Doc ID 15685 Rev 2
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
18.50
mm.
Typ.
5.45
5.50
Package mechanical data
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
13/15