STW13N95K3 STMicroelectronics, STW13N95K3 Datasheet - Page 14

• Manufacturer Part Number: STW13N95K3
• Description: MOSFET N-CH 950V 10A 190W TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STW13N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.68 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 51 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10772-5

Revision history
5
14/15
Revision history
Table 10.
15-May-2009
02-Sep-2010
Date
Document revision history
Revision
1
2
Doc ID 15685 Rev 2
First release.
Document status promoted from preliminary data to datasheet.
STF13N95K3, STP13N95K3, STW13N95K3
Changes