STW13N95K3 STMicroelectronics, STW13N95K3 Datasheet - Page 5

• Manufacturer Part Number: STW13N95K3
• Description: MOSFET N-CH 950V 10A 190W TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STW13N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.68 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 51 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10772-5

STF13N95K3, STP13N95K3, STW13N95K3
Table 6.
Table 7.
1.
Table 8.
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
BV
V
t
t
I
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SDM
SD
Q
Q
t
SD
t
t
t
GSO
r
f
rr
rr
rr
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs ± 1mA, (open drain)
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 15685 Rev 2
I
V
R
(see
I
di/dt = 100 A/µs,
(see
I
di/dt=100 A/µs,
Tj=150 °C(see
Figure
SD
SD
SD
DD
G
=4.7 Ω, V
= 10 A, V
= 10 A, V
= 10 A,V
Test conditions
Test conditions
Test conditions
= 475 V, I
Figure
Figure
21)
DD
22)
21)
GS
GS
DD
D
= 60 V
=0
=10 V
= 60 V
= 5 A,
Electrical characteristics
Min.
Min.
Min
30
-
-
-
-
-
Typ.
Typ.
Typ.
500
624
18
16
50
21
36
11
37
9
-
Max.
Max.
Max.
1.6
10
40
-
Unit
Unit
Unit
mA
µC
µC
ns
ns
ns
ns
ns
ns
A
V
A
A
V
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