AMMC-6220-W10 Avago Technologies US Inc., AMMC-6220-W10 Datasheet - Page 2

• Manufacturer Part Number: AMMC-6220-W10
• Description: IC MMIC LO NOISE HI GAIN 6-20GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of AMMC-6220-W10

• Function: Amplifier
• Frequency Range: 6GHz To 20GHz
• Noise Figure Typ: 2dB
• Supply Current: 55mA
• Supply Voltage Range: 3V
• Frequency Max: 20GHz
• Frequency Min: 6GHz
• Supply Voltage Max: 7V
• Gain: 23dB
• Number Of Channels: 1
• Frequency (max): 20GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 3V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1850; AMMC-6220-W10

AMMC-6220 DC Specifications/Physical Properties
Notes:
1. Ambient operational temperature T
2. Channel-to-backside Thermal Resistance (q
AMMC-6220 RF Specifications
Notes:
3. Small/Large -signal data measured in wafer form T
4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
6. As derived from measured s-parameters
Gain at 12 GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.

Symbol
I
V
q
Symbol
Gain
NF
P-
OIP3
RLin
RLout
Isol
d
g
ch-b
1dB
backside temperature (T
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.
LSL

Parameters and Test Conditions
Small-signal Gain
Noise Figure into 50 W
Output Power at 1dB Gain Compres-
sion
Third Order Intercept Point;
Df=100MHz; Pin=-35dBm
Input Return Loss
Output Return Loss
Reverse Isolation
Parameters and Test Conditions
Drain Supply Current
(under any RF power drive and temperature)
(V
Gate Supply Operating Voltage
(I
Thermal Resistance
(Backside temperature, T
d(Q)
d
=3.0 V)

= 800 (mA))
b
) = 25°C calculated from measured data.
[3, 4, 5]

[6]
[6]
[6]
(T
[6]
A
A
[2]
=25°C unless otherwise noted.
= 25°C, V
b
ch-b
= 25°C)
Noise Figure at 12 GHz
d
) = 26°C/W at T
=3.0 V, I
[1]
A
= 25°C.
d(Q)=
1.
Units
dB
dB
dBm
dBm
dB
dB
dB
55 mA, Z
channel
(T
1.8
c
o
Minimum
21
) = 34°C as measured using infrared microscopy. Thermal Resistance at
=50 Ω)
Units
mA
V
°C/W
1.9
USL
Typical
23
7-10 GHz = 2.1
10-16 GHz = 1.8
16-20 GHz = 2.0
+9
+19
-12
-16
-45
Min.
-11. -11.
Return Loss at 12 GHz
-11
Typ.
55
NA
25
Maximum
8 GHz = 2.4
12 GHz = 2.2
18 GHz = 2.4
-10
-10
-10. -10. -10.1
USL
Max.
70
-9.8
Sigma
0.30
0.10
0.87
1.20
0.31
0.68
0.50
-9.