STGE200NB60S STMicroelectronics, STGE200NB60S Datasheet - Page 13

• Manufacturer Part Number: STGE200NB60S
• Description: IGBT N-CHAN 150A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE200NB60S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 1.56nF @ 25V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 600W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6731-5; STGE200NB60S

STGE200NB60S
DIM.
(L1)
C2
D1
A1
A2
b4
E1
e1
L2
L4
V2
A
B
C
D
E
H
R
e
L
MIN.
0.03
0.64
0.45
0.48
9.35
2.2
0.9
5.2
6.4
4.4
0.6
0°
6
1
DPAK MECHANICAL DATA
mm.
TYP
2.28
5.1
4.7
2.8
0.8
0.2
MAX.
0.23
10.1
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
8°
1
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.039
0.023
MIN.
0°
Package mechanical data
0.200
0.185
0.090
0.110
0.031
0.008
TYP.
inch
0068772-F
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
8°
13/16