STGE200NB60S STMicroelectronics, STGE200NB60S Datasheet - Page 5

• Manufacturer Part Number: STGE200NB60S
• Description: IGBT N-CHAN 150A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE200NB60S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 1.56nF @ 25V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 600W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6731-5; STGE200NB60S

STGE200NB60S
Table 5.
Table 6.
1.
2. Turn-off losses include also the tail of the collector current.
Symbol
(di/dt)
(di/dt)
Symbol
Eon
Eon
t
t
E
E
t
t
t
t
r
r
d
d
d(on)
d(on)
(V
(V
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
(
(
t
t
t
t
t
t
off
off
c
c
r
r
f
f
ts
ts
off
off
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Delay time
Current rise time
Turn-on current slope
Dealy time
Current rise time
Turn-on current slope
Cross-over time
Off voltage rise time
Delay time
Current fall time
Cross-over time
Off voltage rise time
Delay time
Current fall time
Turn-on switching losses
Turn-off switching loss
Total switching loss
Turn-on switching losses
Turn-off switching loss
Total switching loss
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
(see Figure 17)
V
R
Tj= 125°C
V
Tj = 25°C
I
V
Tj = 125°C
I
V
Tj = 25°C
I
V
Tj = 125°C
I
C
C
C
C
CC
CC
G
G
GE
GE
GE
GE
= 100A , V
= 100A , V
= 100A , V
= 3Ω , V
= 3Ω , V
= 100A , V
= 480V, I
= 480V, I
= 15V , R
= 15V , R
= 15V , R
= 15V , R
Test conditions
Test conditions
GE
GE
(see Figure 17)
(see Figure 17)
(see Figure 17)
(see Figure 17)
(see Figure 17)
= 15V, Tj= 25°C
= 15V,
CC
CC
CC
C
C
CC
G
G
G
G
= 100A
= 100A
= 3Ω
= 3Ω
= 3Ω
= 3Ω
= 480V
= 480V
= 480V
= 480V
Figure 17
Electrical characteristics
Min.
Min.
1840
1800
Typ.
2.98
1.23
4.52
Typ.
112
114
11.7
70.7
104
1.7
2.4
2.6
2.8
1.8
64
56
59
12
92
Max.
Max.
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
µ
µ
µ
µ
µ
µ
µ
µ
5/16
s
s
s
s
s
s
s
s