STGE200NB60S STMicroelectronics, STGE200NB60S Datasheet - Page 4

• Manufacturer Part Number: STGE200NB60S
• Description: IGBT N-CHAN 150A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE200NB60S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 1.56nF @ 25V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 600W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6731-5; STGE200NB60S

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
V
Symbol
Symbol
V
V
CASE
BR(CES)
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
I
CL
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
Collector cut-off
(V
Gate-emitterleakage
current (V
Gate threshold voltage
Collector-emitter saturation
voltage
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Latching current
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
V
V
V
V
V
V
V
V
Tj = 125°C , R
C
CE
CE
GE
CE
GE
GE
CE
GE
CE
CE
clamp
= 250µA, V
= Max rating, @ 25°C
= Max rating, @ 125°C
= ±20V, V
= V
= 15V, I
= 15V, I
= 15V
= 25V, f = 1MHz, V
= 480V, I
= 15V
Test conditions
Test conditions
= 480V
GE
, I
,
C
C
I
C
C
=150A,@100°C
GE
C
= 100A
CE
= 250µA
G
= 100A
= 100A,
= 10Ω
= 0
= 0
GE
= 0
Min.
600
Min.
300
3
Typ.
1560
1100
Typ. Max.
1.2
1.2
560
170
80
95
70
0
STGE200NB60S
Max.
±100
500
1.6
5
5
Unit
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
A
V
V
V
V
S