CPV362M4K Vishay, CPV362M4K Datasheet - Page 3

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

100
10
Fig. 2 - Typical Output Characteristics
1
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1
0.1
V
CE
, Collector-to-Emitter Voltage (V)
T = 25 C
J
o
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
T = 150 C
(Load Current = I
J
1
o
10
f, Frequency (KHz)
RMS
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
T = 150 C
J
V
10
GE
o
T c = 9 0°C
T j = 1 25 °C
P ow er F ac tor = 0 .8
M od ulatio n D ep th = 1 .15
V c c = 50 % of R ated V oltag e
, Gate-to-Emitter Voltage (V)
T = 25 C
10
J
CPV362M4K
o
V
5µs PULSE WIDTH
CC
15
= 50V
100
2.05
1.76
0.88
0.59
0.29
0.00
1.46
1.17
20