CPV362M4K Vishay, CPV362M4K Datasheet

CPV362M4K

Manufacturer Part Number

CPV362M4K

Description

IGBT SIP MODULE 600V 31 IMS-2

Manufacturer

Vishay

Datasheets

1.CPV362M4K.pdf (10 pages)

2.CPV362M4FPBF.pdf (8 pages)

Specifications of CPV362M4K

Configuration

Three Phase Inverter

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

1.93V @ 15V, 3A

Current - Collector (ic) (max)

5.7A

Current - Collector Cutoff (max)

250µA

Input Capacitance (cies) @ Vce

0.45nF @ 30V

Power - Max

23W

Input

Standard

Ntc Thermistor

Mounting Type

Through Hole

Package / Case

19-SIP (13 Leads), IMS-2

Transistor Polarity

N Channel

Dc Collector Current

5.7A

Collector Emitter Voltage Vces

600V

Power Dissipation Pd

23W

Collector Emitter Voltage V(br)ceo

600V

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Igbt Type

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Other names

*CPV362M4K

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CPV362M4K

Manufacturer:

Quantity:

Current page: 1 of 8
Download datasheet (220Kb)

Document Number: 94361

Revision: 01-Sep-08

Junction to case, each IGBT, one IGBT in conduction

Junction to case, each diode, one diode in conduction

Case to sink, flat, greased surface

Weight of module

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector to emitter voltage

Continuous collector current, each IGBT

Pulsed collector current

Clamped inductive load current

Diode continuous forward current

Diode maximum forward current

Gate to emitter voltage

Isolation voltage

Maximum power dissipation, each IGBT

Operating junction and

storage temperature range

Soldering temperature

Mounting torque

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

RMS

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

Modulation depth See fig. 1

Supply voltage (DC)

per phase (3.1 kW total)

at I

with T

Power factor

CE(on)

= 4.8 A, 25 °C

(typical)

= 90 °C

IMS-2

For technical questions, contact: ind-modules@vishay.com

SYMBOL

125 °C

, T

115 %

1.41 V

ISOL

360 V

CES

11 A

0.8

Stg

IGBT SIP Module

Repetitive rating; V

pulse width limited by maximum

junction temperature. See fig. 20

L = 10 µH, R

Any terminal to case, t = 1 min

For 10 s

6-32 or M3 screw

(Fast IGBT)

= 25 °C

= 100 °C

= 25 °C

= 100 °C

= 80 % (V

TEST CONDITIONS

thCS

CES

SYMBOL

= 50 Ω See fig. 19

thJC

(module)

), V

(diode)

(IGBT)

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Optimized for medium speed 1 to 10 kHz

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to the advanced line of IMS

(Insulated Metal Substrate) power modules. These modules

are more efficient than comparable bipolar transistor

modules, while at the same time having the simpler

gate-drive requirements of the familiar power MOSFET. This

superior technology has now been coupled to a state of the

art materials system that maximizes power throughput with

low thermal resistance. This package is highly suited to

motor drive applications and where space is at a premium.

See fig. 1 for current vs. frequency curve

= 20 V,

soft ultrafast diodes

Vishay High Power Products

20 (0.7)

TYP.

0.1

300 (0.063" (1.6 mm) from case)

- 40 to + 150

(0.55 to 0.8)

CPV362M4FPbF

MAX.

5 to 7

2500

± 20

600

800

8.8

4.8

3.4

9.1

MAX.

5.5

9.0

www.vishay.com

UNITS

g (oz.)

°C/W

UNITS

(N · m)

lbf · in

RoHS

COMPLIANT

RMS

°C

Related parts for CPV362M4K

CPV362M4K Summary of contents

Page 1

... Stg For screw SYMBOL R (IGBT) thJC R (diode) thJC R (module) thCS For technical questions, contact: ind-modules@vishay.com CPV362M4FPbF Vishay High Power Products ® soft ultrafast diodes MAX. 600 8.8 4.8 26 800 3.4 26 ± 20 2500 23 9 150 300 (0.063" (1.6 mm) from case ...

Page 2

... J t See fig 125 ° ° See fig 125 ° ° See fig 125 ° ° /dt See fig (rec 125 °C J For technical questions, contact: ind-modules@vishay.com MIN. TYP. MAX. UNITS 600 - - - 0. 1.41 1 1.66 - See fig 1.42 - 3 ± 100 - -11 - 2.9 5 250 = 150 ° ...

Page 3

... Fig Typical Load Current vs. Frequency (Load Current = I of Fundamental) RMS = 150 ° µs pulse width µs pulse width For technical questions, contact: ind-modules@vishay.com CPV362M4FPbF Vishay High Power Products 2.63 2. ° 125 °C J 2.05 Power factor = 0.8 Modulation depth = 1.15 1. rated voltage CC 1 ...

Page 4

... V = 400 4 Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate to Emitter Voltage www.vishay.com 4 IGBT SIP Module (Fast IGBT 0.01 0.001 0. Rectangular Pulse Duration ( shorted 100 For technical questions, contact: ind-modules@vishay.com Notes: 1. Duty factor Peak thJC C 0 480 ° 4 Gate Resistance (Ω) G Fig ...

Page 5

... Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current Document Number: 94361 Revision: 01-Sep-08 IGBT SIP Module (Fast IGBT 100 1000 2.4 2.8 3.2 For technical questions, contact: ind-modules@vishay.com CPV362M4FPbF Vishay High Power Products 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ...

Page 6

... F Same type device as D.U.T. D.U. off(diode µs Eoff = Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit f For technical questions, contact: ind-modules@vishay.com Gate voltage D.U. D.U.T. voltage Vce and current (on Eon = Fig. 18c - Test Waveforms of Circuit of Fig. 18a, ...

Page 7

... CIRCUIT CONFIGURATION 3 6 Dimensions Document Number: 94361 Revision: 01-Sep-08 IGBT SIP Module (Fast IGBT) D.U. 480 LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com CPV362M4FPbF Vishay High Power Products 480 Fig Pulsed Collector Current Test Circuit http://www.vishay.com/doc?95066 www.vishay.com at 25 °C 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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