CPV362M4K Vishay, CPV362M4K Datasheet - Page 7

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

Fig. 14 - Typical Reverse Recovery vs. di
500
400
300
200
100
100
80
60
40
20
0
0
100
Fig. 16 - Typical Stored Charge vs. di
100
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
I = 8.0A
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
I = 4.0A
F
F
R
J
J
R
J
J
I = 16A
F
d i /d t - (A /µ s)
d i /d t - (A /µ s )
f
f
I = 16A
F
I = 8.0A
I = 4.0A
F
F
f
/dt
1000
1000
f
/dt
Fig. 15 - Typical Recovery Current vs. di
10000
1000
100
100
10
1
100
100
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
Fig. 17 - Typical di
I = 8.0 A
R
J
J
F
R
J
J
I = 16A
F
CPV362M4K
d i /d t - (A /µ s )
d i /d t - (A /µ s )
I = 8.0 A
I = 4.0A
F
F
I = 16A
f
F
f
(rec)M
I = 4.0A
F
/dt vs. di
f
/dt
f
/dt
1000
1000