APT35GP120JDQ2 Microsemi Power Products Group, APT35GP120JDQ2 Datasheet - Page 2

• Manufacturer Part Number: APT35GP120JDQ2
• Description: IGBT 1200V 64A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 64A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 3.24nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120JDQ2MI; APT35GP120JDQ2MI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
RBSOA
V
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained h
V
Isolation
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage
ces
includes both IGBT and FRED leakages
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
3
6
6
4
4
4
55
5
T
Inductive Switching (125°C)
15V, L = 100µH,V
Inductive Switching (25°C)
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
V
T
V
V
V
R
R
f = 1 MHz
J
CC
CC
CE
I
I
I
J
GE
GE
GE
G
G
C
C
C
= +125°C
= +25°C
= 35A
= 35A
= 4.3Ω
= 35A
= 4.3Ω
= 600V
= 600V
= 600V
G
= 15V
= 15V
= 15V
= 4.3Ω, V
CE
CE
= 25V
= 960V
GE
=
2500
MIN
140
MIN
3240
1305
2130
1745
TYP
250
150
750
680
145
750
29.2
TYP
7.5
31
21
60
16
20
95
40
16
20
75
MAX
MAX
1.10
.44
UNIT
UNIT
°C/W
Volts
nC
pF
µ
µ
gm
ns
ns
V
A
J
J