APT35GP120JDQ2 Microsemi Power Products Group, APT35GP120JDQ2 Datasheet - Page 8

• Manufacturer Part Number: APT35GP120JDQ2
• Description: IGBT 1200V 64A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 64A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 3.24nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120JDQ2MI; APT35GP120JDQ2MI

Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Dynamic Parameters vs. Junction Temperature
4000
3500
3000
2500
2000
1500
1000
100
500
200
150
100
Figure 31. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
50
0
0
Figure 25. Forward Current vs. Forward Voltage
0
0
0
0
1
-di
T
V
t
V
I
J
rr
RRM
R
F
60A
T
F
T
= 125°C
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
J
T
200
, JUNCTION TEMPERATURE (°C)
= 125°C
25
J
V
= 175°C
1
R
, REVERSE VOLTAGE (V)
400
50
2
Q
10
rr
600
75
15A
3
T
800
100
J
= -55°C
t
rr
T
J
1000
Q
4
125
= 25°C
rr
100 200
30A
1200
150
5
Figure 26. Reverse Recovery Time vs. Current Rate of Change
Figure 30. Maximum Average Forward Current vs. CaseTemperature
Figure 28. Reverse Recovery Current vs. Current Rate of Change
450
400
350
300
250
200
150
100
50
30
25
20
15
10
45
40
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
15A
60A
600
600
100
60A
30A
30A
800
800
125
Duty cycle = 0.5
T
1000
J
T
1000
V
150
J
R
= 175°C
= 125°C
= 800V
15A
1200
1200
175