APT35GP120JDQ2 Microsemi Power Products Group, APT35GP120JDQ2 Datasheet - Page 6

• Manufacturer Part Number: APT35GP120JDQ2
• Description: IGBT 1200V 64A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 64A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 3.24nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120JDQ2MI; APT35GP120JDQ2MI

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
Switching
Energy
90%
t
d(off)
I
C
D.U.T.
90%
V
t
f
CE
10%
APT30DQ120
A
Collector Voltage
Collector Current
Gate Voltage
0
T
J
= 125 °C
Figure 22, Turn-on Switching Waveforms and Definitions
Switching Energy
10%
5%
t
10%
r
t
d(on)
90%
5 %
Collector Current
Collector Voltage
Gate Voltage
T
J
= 125 °C