CPV363M4K Vishay, CPV363M4K Datasheet - Page 4

• Manufacturer Part Number: CPV363M4K
• Description: IGBT SIP MODULE 600V 6A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 11A
• Current - Collector (ic) (max): 11A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.74nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV363M4K; VS-CPV363M4K; VS-CPV363M4K; VSCPV363M4K; VSCPV363M4K

Document Number: 93604
CPV363M4K
Fig. 4 - Maximum Collector Current vs.
0.01
1 2
0 .1
10
0.0000 1
9
6
3
0
1
2 5
D = 0.50
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0.02
0.01
0.20
0.10
0.05
T , C ase T em pera ture (° C )
Case Temperature
5 0
C
( THE RMAL RES PO NSE)
SINGLE PULSE
0.0001
7 5
1 0 0
V
t , R e ct an gu la r P ulse D ura tion (s ec )
0.001
1
1 2 5
GE
= 1 5 V
1 5 0
A
0.0 1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
T , Junction Temperature ( C)
Note s:
1. Du ty fac tor D = t
2. Pe ak T = P
0.1
J
0
20
J
40
D M
x Z
60
1
/ t
th JC
2
80 100 120 140 160
P
1
D M
+ T
I =
I =
I =
C
C
C
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C
t
1
t 2
12
6
3
°
A
A
A
1 0
4