CPV363M4K Vishay, CPV363M4K Datasheet - Page 5

• Manufacturer Part Number: CPV363M4K
• Description: IGBT SIP MODULE 600V 6A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 11A
• Current - Collector (ic) (max): 11A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.74nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV363M4K; VS-CPV363M4K; VS-CPV363M4K; VSCPV363M4K; VSCPV363M4K

Document Number: 93604
Fig. 9 - Typical Switching Losses vs. Gate
1500
1200
1.0
0.8
0.6
0.4
0.2
0.0
900
600
300
0
0
1
V
V
T
I
J
C
CC
GE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
= 25 C
= 480V
= 15V
= 6.0A
V
R , Gate Resistance (Ohm)
CE
10
G
R
G
V
C
C
C
°
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
, Gate Resistance (
C
C
C
ies
oes
res
=
=
=
=
0V,
C
C
C
20
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
0.1
20
16
12
10
Fig. 10 - Typical Switching Losses vs.
8
4
0
1
-60 -40 -20
0
V
R
V
V
Fig. 8 - Typical Gate Charge vs.
I
GE
CC
CC
C
G
= 400V
= 6.0A
= 23Ohm
= 15V
= 480V
Gate-to-Emitter Voltage
Junction Temperature
10
T , Junction Temperature ( C )
Q , Total Gate Charge (nC)
J
G
20
0
CPV363M4K
20
40
40
60
80 100 120 140 160
www.vishay.com
60
I =
I =
I =
C
C
C
°
12
6
3
A
A
A
80
5