APTGF150DH120G Microsemi Power Products Group, APTGF150DH120G Datasheet - Page 3
APTGF150DH120G
Manufacturer Part Number
APTGF150DH120G
Description
IGBT MODULE NPT ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF150DH120G.pdf
(5 pages)
Specifications of APTGF150DH120G
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF150DH120G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Thermal and package characteristics
Symbol Characteristic
SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Torque
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
For terminals
APTGF150DH120G
Diode
IGBT
M6
M5
2500
Min
-40
-40
-40
3
2
Typ
Max
0.13
0.32
150
125
100
280
3.5
5
°C/W
Unit
N.m
°C
V
g
3 - 5