APTGF150DH120G Microsemi Power Products Group, APTGF150DH120G Datasheet - Page 4

• Manufacturer Part Number: APTGF150DH120G
• Description: IGBT MODULE NPT ASYM BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150DH120G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.2nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
70
60
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
50
Switching Energy Losses vs Gate Resistance
50
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
G E
J
5
0.1
= 150A
0.7
0.05
0.9
0.3
Output Characteristics (V
= 125°C
0.5
= 600V
=15V
6
1
10 15 20 25 30 35 40 45 50
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
0.0001
8
V
T
V
J
T
CE
GE
=125°C
Eon
J
3
=25°C
(V)
Eoff
(V)
T
9
J
=125°C
T
J
=25°C
4
10
GE
=15V)
rectangular Pulse Duration (Seconds)
0.001
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5
11
12
6
Single Pulse
0.01
350
300
250
200
150
100
56
48
40
32
24
16
300
250
200
150
100
50
8
0
50
0
0
0
0
APTGF150DH120G
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
G
J
GE
G
J
= 125°C
=125°C
= 5.6 Ω
=5.6 Ω
0.1
= 125°C
= 600V
= 15V
=15V
50
300
1
Output Characteristics
100
2
600
I
C
V
150
V
V
(A)
CE
GE
3
CE
(V)
1
=20V
900
(V)
200
IGBT
4
Eon
1200
V
250
V
GE
V
G E
5
GE
Eoff
=15V
=9V
=12V
1500
300
10
6
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