APTGF150DH120G Microsemi Power Products Group, APTGF150DH120G Datasheet - Page 5
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APTGF150DH120G
Manufacturer Part Number
APTGF150DH120G
Description
IGBT MODULE NPT ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF150DH120G.pdf
(5 pages)
Specifications of APTGF150DH120G
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF150DH120G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.35
0.25
0.15
0.05
90
80
70
60
50
40
30
20
10
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0
switching
0.05
0.9
0.7
0.5
0.1
hard
0.3
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
80
I
C
(A)
ZVS
120
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=5.6 Ω
160
=600V
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
200
Diode
0.01
500
400
300
200
100
0
APTGF150DH120G
0
0.1
Forward Characteristic of diode
0.5
1
T
J
V
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5