APTGT400SK120G Microsemi Power Products Group, APTGT400SK120G Datasheet
APTGT400SK120G
Specifications of APTGT400SK120G
Related parts for APTGT400SK120G
APTGT400SK120G Summary of contents
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... Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT400SK120G ® Application • AC and DC motor control VBUS • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT400SK120G = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 400A T = 125°C C ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT400SK120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 For terminals M5 www.microsemi.com Typ ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 0.06 0.7 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGT400SK120G =15V) GE 800 T 700 T =125°C 600 J 500 400 300 200 100 Energy losses vs Collector Current 100 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT400SK120G Forward Characteristic of diode 800 ...