APTGT400SK120G Microsemi Power Products Group, APTGT400SK120G Datasheet - Page 5

• Manufacturer Part Number: APTGT400SK120G
• Description: IGBT 1200V 560A 1785W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400SK120G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 400A
• Current - Collector (ic) (max): 560A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 28nF @ 25V
• Power - Max: 1785W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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60
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
0
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
0.05
0.9
0.7
0.5
0.1
0.3
ZCS
100
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
200
0.0001
I
C
(A)
300
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
=1.2Ω
=600V
400
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
500
Single Pulse
0.01
800
700
600
500
400
300
200
100
APTGT400SK120G
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
T
Diode
J
=125°C
2
2.4
10
5 - 5