APTGT400SK120G Microsemi Power Products Group, APTGT400SK120G Datasheet - Page 4

• Manufacturer Part Number: APTGT400SK120G
• Description: IGBT 1200V 560A 1785W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400SK120G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 400A
• Current - Collector (ic) (max): 560A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 28nF @ 25V
• Power - Max: 1785W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
100
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
90
80
70
60
50
40
30
20
10
0
0
0.00001
0
0
0
5
0
V
T
V
I
CE
0.9
Output Characteristics (V
C
J
0.7
0.5
0.3
0.1
GE
T
= 125°C
= 400A
0.05
6
J
= 600V
=125°C
Transfert Characteristics
=15V
2
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
7
J
=25°C
0.0001
4
V
8
V
CE
GE
2
(V)
T
(V)
J
=25°C
9
Eon
6
T
10
J
GE
=125°C
T
3
Eoff
=15V)
J
=125°C
Er
8
rectangular Pulse Duration (Seconds)
0.001
11
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Single Pulse
10
12
4
0.01
800
700
600
500
400
300
200
100
100
900
800
700
600
500
400
300
200
100
APTGT400SK120G
80
60
40
20
0
0
0
0
0
0
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
V
V
R
T
J
GE
G
T
0.1
CE
GE
J
=125°C
G
100 200 300 400 500 600 700 800
=1.2 Ω
J
= 125°C
=15V
= 1.2Ω
= 600V
= 15V
= 125°C
Eon
300
1
Output Characteristics
600
V
V
V
GE
CE
CE
2
I
=17V
C
1
(V)
(A)
900
(V)
IGBT
V
GE
1200
3
=15V
V
GE
V
Eon
GE
=13V
Eoff
=9V
Er
1500
10
4
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