APTGL475SK120D3G Microsemi Power Products Group, APTGL475SK120D3G Datasheet - Page 3
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APTGL475SK120D3G
Manufacturer Part Number
APTGL475SK120D3G
Description
IGBT 1200V 610A 2080W D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGL475SK120D3G.pdf
(5 pages)
Specifications of APTGL475SK120D3G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 400A
Current - Collector (ic) (max)
610A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
24.6nF @ 25V
Power - Max
2080W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
Symbol Characteristic
Torque
D3 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
A
(dimensions in mm)
For terminals
www.microsemi.com
To Heatsink
1°
APTGL475SK120D3G
Diode
IGBT
M6
M6
DÉTAIL A
2500
Min
-40
-40
-40
3
3
Typ
0.072
Max
0.14
175
125
125
350
5
5
°C/W
Unit
N.m
°C
V
g
3 - 5