APTGL475SK120D3G Microsemi Power Products Group, APTGL475SK120D3G Datasheet - Page 4

• Manufacturer Part Number: APTGL475SK120D3G
• Description: IGBT 1200V 610A 2080W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL475SK120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 400A
• Current - Collector (ic) (max): 610A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 24.6nF @ 25V
• Power - Max: 2080W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
800
600
400
200
180
150
120
0.08
0.06
0.04
0.02
800
600
400
200
Switching Energy Losses vs Gate Resistance
90
60
30
0
0.00001
0
0
0
5
0
0
V
T
Output Characteristics (V
V
I
CE
C
J
0.3
0.1
6
GE
0.05
0.9
0.7
0.5
= 150°C
= 400A
T
= 600V
Transfert Characteristics
J
=15V
=150°C
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2.5
7
1
8
0.0001
T
J
=25°C
V
V
GE
CE
9
5
2
(V)
(V)
T
10
J
=25°C
T
7.5
GE
11
J
=150°C
3
=15V)
Eon
rectangular Pulse Duration (Seconds)
0.001
Eoff
Err
12
10
13
4
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Single Pulse
0.01
APTGL475SK120D3G
800
600
400
200
960
800
640
480
320
160
80
60
40
20
0
0
0
0
0
0
V
V
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
T
= 150°C
V
T
R
0.1
= 1.Ω
Err
J
J
= 600V
= 15V
GE
G
=150°C
=1.Ω
= 150°C
=15V
300
200
Output Characteristics
1
Eon
600
I
V
V
V
C
400
GE
CE
CE
(A)
2
=19V
1
(V)
(V)
900
IGBT
Eoff
600
1200
3
V
GE
V
GE
=15V
=9V
1500
10
800
4
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