APTGL475SK120D3G Microsemi Power Products Group, APTGL475SK120D3G Datasheet - Page 5

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APTGL475SK120D3G

Manufacturer Part Number
APTGL475SK120D3G
Description
IGBT 1200V 610A 2080W D3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGL475SK120D3G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 400A
Current - Collector (ic) (max)
610A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
24.6nF @ 25V
Power - Max
2080W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0
0.1
Operating Frequency vs Collector Current
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.1
0.3
0.05
120
ZCS
240
0.0001
ZVS
I
C
(A)
360
V
D=50%
R
T
Tc=75°C
J
CE
G
=150°C
=1 Ω
Diode
=600V
480
Rectangular Pulse Duration in Seconds
0.001
600
Single Pulse
www.microsemi.com
0.01
APTGL475SK120D3G
800
600
400
200
0
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5

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