MITB10WB1200TMH IXYS, MITB10WB1200TMH Datasheet - Page 2

• Manufacturer Part Number: MITB10WB1200TMH
• Description: MODULE IGBT CBI
• Manufacturer: IXYS

Specifications of MITB10WB1200TMH

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 17A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 70W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 61
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 2.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 17
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 12
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.9
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 12
• Rthjc, Typ, Br Chopper, (k/w): 1.9
• Package Style: MiniPack 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
t
t
t
t
E
E
RBSOA
I
(SCSOA)
R
R
Symbol
V
I
I
V
Q
I
t
E
R
R
Ouput Inverter T1 - T6
C25
C80
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC
Output Inverter D1 - D6
F25
F80
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
on
off
thJC
thCH
RRM
F
rec
G(on)
thJC
thCH
rr
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Advanced Technical Information
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
inductive load
V
V
V
V
R
(per IGBT)
Conditions
I
V
di
(per diode)
I
C
C
F
F
GE
CE
GE
CE
CE
CE
GE
CE
GE
CE
G
R
F
= 10 A; V
= 0.3 A; V
= 10 A; V
= 10 A; V
/dt = -300 A/µs
= 600 V
= 100 W; t
= V
= ±20 V
= 25 V; V
= 600 V; V
= 600 V; I
= ±15 V; R
= 600 V; I
= ±15 V; R
= ±15 V; R
= 720 V; V
CES
; V
GE
GE
GE
GE
GE
GE
p
C
C
= 0 V
= 15 V
GE
GE
= 0 V
G
= V
G
G
= 10 µs; non-repetitive
= 0 V
= 10 A
= 10 A
= 0 V; f = 1 MHz
= 100 W; I
= 100 W
= 100 W
= 15 V; I
= ±15 V;
CE
C
C
= 10 A
= 20 A; T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
C
= 25°C unless otherwise stated
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 150°C
= 25°C
= 80°C
= 25°C
= 125°C
= 125°C
= 125°C
MITB10WB1200TMH
min.
min.
V
CEK
5
< V
0.75
1.55
0.65
12.8
0.54
0.55
Ratings
typ.
Ratings
typ.
600
320
200
360
340
335
1.9
2.3
5.5
0.8
0.9
1.1
2.0
1.6
1.9
CES
54
55
30
60
35
40
-L
S
·d
max.
1200
max.
1200
±20
±30
150
I
2.2
6.5
0.6
1.9
2.4
1.6
17
12
70
/dt
24
16
20100906b
2 - 8
Unit
Unit
K/W
K/W
K/W
K/W
mA
mA
mJ
mJ
mJ
mJ
nC
mJ
nA
µC
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
W
V
V
V
A
A
V
V
V
V
A
V
A
A
V
V
A