MITB10WB1200TMH IXYS, MITB10WB1200TMH Datasheet - Page 4

• Manufacturer Part Number: MITB10WB1200TMH
• Description: MODULE IGBT CBI
• Manufacturer: IXYS

Specifications of MITB10WB1200TMH

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 17A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 70W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 61
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 2.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 17
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 12
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.9
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 12
• Rthjc, Typ, Br Chopper, (k/w): 1.9
• Package Style: MiniPack 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Symbol
V
I
I
I
I
P
V
I
R
R
Symbol
R
B
Symbol
T
T
T
V
CTI
F
d
d
Weight
Symbol
V
R
V
R
V
R
V
R
V
R
Temperature Sensor NTC
Input Rectifier Bridge D8 - D11
FAV
DAVM
FSM
2
R
Module
Equivalent Circuits for Simulation
I
t
VJ
VJM
stg
C
S
A
RRM
tot
F
thJC
thCH
25
25/50
ISOL
0
0
0
0
0
0
0
0
0
0
V
0
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. forward surge current
I
total power dissipation
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
resistance
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting force
creep distance on surface
strike distance through air
R
Definitions
rectifier diode
IGBT
free wheeling diode
IGBT
free wheeling diode
2
0
t value for fusing
Advanced Technical Information
Conditions
sine 180°
rect.; d =
t = 10 ms; sine 50 Hz
t = 10 ms; sine 50 Hz
I
V
(per diode)
(per diode)
Conditions
Conditions
I
Conditions
D8 - D13
T1 - T6
D1 - D6
T7
D7
F
ISOL
R
= 30 A
= V
< 1 mA; 50/60 Hz
RRM
1
/
3
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
VJ
C
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
VJ
= 25°C unless otherwise stated
= 25°C
= 80°C
= 80°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
MITB10WB1200TMH
min.
min.
min.
min.
4.75
12.7
-40
-40
40
12
3375
1.35
1.35
1.15
Ratings
typ.
Ratings
typ.
Ratings
typ.
Ratings
typ.
125
125
0.3
0.7
5.0
0.9
1.0
1.0
1.4
35
16
45
60
max.
1600
max.
max.
2500
max.
0.01
5.25
300
450
125
150
125
tbd
tbd
1.6
2.1
22
61
50
80
-
20100906b
4 - 8
Unit
Unit
Unit
Unit
K/W
K/W
mm
mm
mW
mW
mW
mW
mW
A
A
mA
mA
kW
V~
°C
°C
°C
W
2
2
N
V
A
A
A
A
V
V
K
V
V
V
V
V
g
s
s