MUBW35-12E7 IXYS, MUBW35-12E7 Datasheet - Page 6

• Manufacturer Part Number: MUBW35-12E7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW35-12E7

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 35A
• Current - Collector (ic) (max): 52A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 52A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 30
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 52
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 36
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.2
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
I
V
I
C
C
GE
120
100
120
100
80
60
40
20
A
A
20
15
10
80
60
40
20
Fig. 7 Typ. output characteristics
Fig. 9 Typ. transfer characteristics
V
Fig. 11 Typ. turn on gate charge
0
5
0
0
0
0
4
T
VJ
V
CE
= 125°C
1
= 20 V
6
40
2
8
V
GE
80
= 17 V
3
T
VJ
10
= 25°C
4
120
V
V
CE
GE
12
5
V
I
C
Q
CE
G
160
T
= 600 V
= 35 A
VJ
14
= 25°C
6
nC
15 V
13 V
11 V
9 V
V
V
200
7
16
I
Z
0.0001
C
thJC
0.001
I
F
0.01
Fig. 12 Typ. transient thermal impedance
120
100
K/W
Fig. 8 Typ. output characteristics
Fig. 10 Typ. forward characteristics of
0.1
A
10
80
60
40
20
90
75
60
45
30
15
A
0.001
0
1
0
0
0
free wheeling diode
1
T
0.01
VJ
1
= 125°C
2
single pulse
3
0.1
V
MUBW 35-12 E7
2
GE
= 17 V
4
V
V
F
T
CE
VJ
5
t
= 25°C
1
3
T
VJ
= 125°C
6
MUBW3512E7
V
13 V
15 V
11 V
diode
IGBT
9 V
s
V
10
20070912a
7
4
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