MUBW35-12E7 IXYS, MUBW35-12E7 Datasheet - Page 7

• Manufacturer Part Number: MUBW35-12E7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW35-12E7

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 35A
• Current - Collector (ic) (max): 52A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 52A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 30
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 52
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 36
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.2
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

E
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E
Output Inverter T1 - T6 / D1 - D6
on
on
70
60
50
40
30
20
10
mJ
20
16
12
mJ
0
8
4
0
8
6
4
2
0
Fig. 17 Typ. turn off characteristics
0
10
0
Fig. 13
Fig. 15 Typ. turn on energy and switching
V
V
I
T
C
T
I
V
VJ
CE
GE
F
200
VJ
R
= 600 V
= ±15 V
= 35 A
= 125°C
20
= 125°C
= 30 A
= 600 V
of free wheeling diode
400
20
times versus gate resistor
Typ. turn on energy and switching
times versus collector current
30
600
E on
E
40
t d(on)
rec(off)
800
-di
t r
75Ω
75Ω
40
F
/dt [A/µs]
50
1000
56Ω
56Ω
E on
R
39Ω
39Ω
I
G
C
1200
60
60
t d(on)
V
V
R
T
24Ω
R
E
24Ω
VJ
CE
GE
G
G
=
REC(off)
= 39 Ω
1400
= 600 V
= ±15 V
t r
= 125°C
70
A
15Ω
15Ω
Ω
1600
I
t
RM
RR
80
80
100
90
80
70
60
50
40
30
20
10
0
160
120
80
40
0
ns
ns
1800
350
300
250
200
150
100
50
0
t
t
E
E
12
10
off
off
8
6
4
2
0
Fig. 14
0
mJ
Fig.16 Typ. turn off energy and switching
mJ
Fig. 18 Typ. turn off characteristics
6
4
2
0
4
3
2
1
0
10
T
V
0
VJ
R
200
t
V
V
I
T
E
C
d(off)
CE
GE
VJ
= 125°C
= 600 V
off
V
V
R
T
VJ
CE
GE
G
= 600 V
= ±15 V
= 35 A
= 125°C
Typ. turn off energy and switching
times versus collector current
20
times versus gate resistor
= 600 V
= 39 Ω
= ±15 V
= 125°C
400
of free wheeling diode
20
30
600
75 Ω
56 Ω
800
40
-di
7,5A
F
39 Ω
/dt [A/µs]
R
40
G
=
MUBW 35-12 E7
1000
50
15A
24 Ω
R
1200
G
I
60
C
15 Ω
60
I
F
=
1400
70A
70
A
t
E
t
d(off)
Ω
f
off
1600
50A
35A
t
f
80
80
1200
1000
800
600
400
200
0
20070912a
800
600
400
200
0
ns
1800
ns
7 - 8
t
t
Ex
D
al
w