MWI100-12A8 IXYS, MWI100-12A8 Datasheet - Page 2

• Manufacturer Part Number: MWI100-12A8
• Description: MOD IGBT SIXPACK RBSOA 1200V E3
• Manufacturer: IXYS

Specifications of MWI100-12A8

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 100A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 6.3mA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 640W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 160A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic80, Tc = 80°c, Igbt, (a): 110
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 14.6
• Rthjc, Max, Igbt, (k/w): 0.19
• If25, Tc = 25°c, Diode, (a): 200
• If80, Tc = 80°c, Diode, (a): 130
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
I
Symbol
V
I
t
R
Symbol
T
T
T
V
M
Symbol
R
d
d
R
Weight
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Diodes
F25
F80
RM
Module
rr
VJ
JM
stg
S
A
F
ISOL
thJC
pin-chip
thCH
d
Conditions
T
T
Conditions
I
I
V
(per diode)
Conditions
operating
I
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
F
F
ISOL
C
C
R
= 100 A; V
= 120 A; di
= 25°C
= 80°C
= 600 V; V
≤ 1 mA; 50/60 Hz
GE
F
GE
/dt = -750 A/µs; T
= 0 V; T
= 0 V
T
VJ
VJ
= 25°C
= 125°C
VJ
= 125°C
min.
min.
10
10
Characteristic Values
Characteristic Values
-40...+125
-40...+125
Maximum Ratings
Maximum Ratings
1.8
0.01
300
200
typ.
typ.
2.3
1.7
82
+150
2500
3 - 6
200
130
max.
max.
2.6
0.3 K/W
Nm
K/W
mm
mm
mΩ
V~
°C
°C
°C
ns
A
A
V
V
A
g
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
Equivalent Circuits for Simulation
C
C
C
C
th1
th2
th1
th2
= 0.397 J/K; R
= 2.243 J/K; R
= 0.301 J/K; R
= 2.005 J/K; R
V
MWI 100-12 A8
V
0
0
= 1.27 V; R
= 1.3 V; R
GE
= 15 V; T
0
0
th1
th2
th1
th2
= 12 m Ω
= 4.3 m Ω
= 0.141 K/W
= 0.049 K/W
= 0.238 K/W
= 0.062 K/W
J
= 125°C)
J
= 125°C)
20070912a
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