MWI100-12T8T IXYS, MWI100-12T8T Datasheet - Page 6

• Manufacturer Part Number: MWI100-12T8T
• Description: MOD IGBT TRENCH SIXPACK E3
• Manufacturer: IXYS

Specifications of MWI100-12T8T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 145A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 7.21nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 145
• Ic80, Tc = 80°c, Igbt, (a): 100
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 13.5
• Rthjc, Max, Igbt, (k/w): 0.26
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
I
[A]
[mJ]
Inverter D1 - D6
[A]
E
RR
I
F
rec
200
150
100
160
140
120
100
50
80
60
40
1000
1000
0
8
6
4
2
0
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
VJ
VJ
R
R
= 125°C
1200
= 125°C
1200
= 600 V
= 600 V
0.5
T
T
VJ
VJ
= 125°C
= 25°C
1400
1400
1.0
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
1600
1600
F
1.5
[V]
1800
1800
2.0
rec
RM
versus di/dt
2000
2000
vs. di/dt
2.5
F
200 A
100 A
50 A
200 A
100 A
50 A
2200
2200
3.0
[K/W]
[ns]
Z
t
rr
thJC
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
24
20
16
12
0.001
1000
1000
8
4
0
1
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
1200
1200
T
V
VJ
R
= 125°C
0.01
= 600 V
1400
1400
di
di
F
MWI100-12T8T
F
t
/dt [A/µs]
1600
/dt [A/µs]
1600
p
0.1
[s]
rr
1800
1800
versus di/dt
T
V
VJ
R
= 125°C
= 600 V
1
rr
2000
2000
vs. di/dt
200 A
100 A
50 A
200 A
100 A
50 A
Diode
IGBT
20100910c
2200
2200
6 - 7
10