GA100TS120U Vishay, GA100TS120U Datasheet - Page 2

• Manufacturer Part Number: GA100TS120U
• Description: IGBT FAST 1200V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 18.672nF @ 30V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Supplier Unconfirmed

GA100TS120U
Electrical Characteristics @ T
Dynamic Characteristics - T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
fe
V
(BR)CES
CE(on)
GE(th)
FM
on
off (1)
ts (1)
ies
oes
res
g
gc
rr
(rec)
2
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Gate - Emitter Charge (turn-on)
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 18672 —
—
—
—
—
—
—
—
7664
1916
136
140
275
172
141
435
343
830
161
149
104
830 1245
2.4
2.2
-11
3.3
3.2
14
21
35
—
—
—
—
—
250
210
412
2.9
6.0
1.0
4.0
10
52
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
mA
A/µs
nA
nC
mJ
µC
pF
V
S
V
ns
ns
A
V
V
V
I
V
V
V
I
I
V
V
I
T
R
I
V
V
V
V
ƒ = 1 MHz
I
R
R
V
di/dt»1300A/µs
C
F
F
C
C
C
GE
GE
GE
CE
CE
GE
GE
GE
J
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 100A, V
= 100A, V
= 1.25mA
= 124A
= 100A
= 100A
= 25°C
= V
= 25V, I
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15 , R
= ±15V
= 0V
= 30V
= 15
= 0
720V
720V
GE
, I
C
CE
CE
GE
C
C
C
C
Conditions
GE
Conditions
= 1mA
G2
= 1.25mA
= 100A
= 100A
= 100A, T
= 1200V
= 1200V, T
= 0V, T
= 0V
= 0 ,
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J
= 125°C
J
= 125°C
J
= 125°C